Thermal stability of intermediate band behavior in Ti implanted Si

Solar Energy Materials and Solar Cells

Volumn 94, Issue 11, 2010, Pages 1907-1911

  Olea, J ^a   Pastor, D ^a   Martil I ^a   Gonzalez Diaz G ^a  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Intermediate band; Ion implantation; Pulsed laser melting; Silicon; Titanium

Indexed keywords

CRYSTALLINE LATTICE; ELECTRICAL MEASUREMENT; ELECTRICAL TRANSPORT PROPERTIES; HIGH DOSE; INTERMEDIATE BANDS; ISOCHRONAL ANNEALING; NEW MATERIAL; PULSED LASER; THERMAL STABILITY; THERMAL-ANNEALING; THERMODYNAMIC EQUILIBRIA;

ANNEALING; ELECTRIC PROPERTIES; ION IMPLANTATION; LASER THEORY; MELTING; PULSED LASER APPLICATIONS; THERMODYNAMIC STABILITY; TITANIUM; TRANSPORT PROPERTIES;

PULSED LASERS;

EID: 77957108147     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.06.045     Document Type: Article

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