SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 1210, Issue , 2010, Pages 93-98

Raman and rutherford backscattering characterization of Ti implanted Si above Mott limit

(7) Olea, Javier a Pastor, David a Mártil, Ignacio a González Díaz, Germán a Ibáñez, Jordi b Cuscó, Ramón b Artús, Luis b

a UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

b INSTITUTE OF EARTH SCIENCES JAUME ALMERA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE LATTICE; CRYSTALLINE QUALITY; ENERGY DENSITY; ESSENTIAL POINT; INTERMEDIATE BANDS; INTERSTITIAL SITES; LASER MELTING; LATTICE LOCATIONS; LATTICE SITES; RBS-CHANNELING; RUTHERFORD BACK-SCATTERING; THEORETICAL STUDY;

BACKSCATTERING; CRYSTALLINE MATERIALS; IMPURITIES; RAMAN SPECTROSCOPY;

RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EID: 78650408225 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (2)

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