High quality Ti-implanted Si layers above solid solubility limit

Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

Volumn , Issue , 2009, Pages 38-41

  Olea, J ^a   Pastor, D ^a   Toledano Luque, M ^a   San Andres E ^a   Martil I ^a   Gonzalez Diaz G ^a  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITY; ELECTRICAL ACTIVATIONS; GLANCING INCIDENCE X-RAY DIFFRACTIONS; HIGH DOSE; HIGH MOBILITIES; HIGH QUALITIES; IMPLANTED LAYERS; LASER-MELTING; SI LAYERS; SOLID SOLUBILITIES; TEM; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPIES;

ELECTRON DEVICES; HALL MOBILITY; PULSED LASER APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SILICON; SOLUBILITY; TERNARY SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY;

GALVANOMAGNETIC EFFECTS;

EID: 64949187952     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCED.2009.4800424     Document Type: Conference Paper

References (13)

1. A. Martí and A. Luque, "Next generation photovoltaics: high efficiency through full spectrum utilization," Institute of Physics Publishing, Bristol, UK, 2004.
2. Luque and A. Martí, "Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels," Phys. Rev. Lett., vol. 78, no. 26, pp. 5014-5017, Jun. 1997.
3. M. A. Green, "Third generation of photovoltaics" (Springer, Berlinm Germany, 2005).
4. W. Shockley and H.J. Queisser, "Detailed balance limit of efficiency of p-n junction solar cells," J. Appl. Phys., vol. 32, pp. 510-519, 1961.
5. A. Luque et al., "Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells," Appl. Phys. Lett., vol. 87, no. 8, pp. 083505.1-083505.3, Aug. 2005.
6. K. M. Yu, M. A. Scarpulla, R. Farshchi, O. D. Dubon and W. Walukiewicz, "Synthesis of highly mismatched alloys using ion implantation and pulsed laser annealing," Nucl. Instrum. Methods B, vol. 261, p. 1150, Mar. (2007).
7. N. F. Mott, "Metal Insulator Transition," Rev. Mod. Phys., vol. 40, no. 4, pp. 677-683, Oct. 1968.
8. S. Hocine and D. Mathiot, "Titanium diffusion in silicon," Appl. Phys. Lett., vol. 53, no. 14, pp. 1269-1271, Oct. 1988.
9. K. M. Yu et al., "Multiband GaNAsP quaternary alloys," Appl. Phys. Lett., vol. 88, no. 9, pp. 092110.1-092110.3, Mar. 2006.
10. P. Wahnón, Universidad Politécnica de Madrid, Madrid, Spain, private communication, Jul. 2008.
11. J. Olea, M. Toledano-Luque, D. Pastor, G. González-Díaz and I. Mártil, "Titanium doped silicon layers with very high concentration," J. Appl. Phys., vol. 104, pp. 016105.1-3, Jul. 2008.
12. M. H. Clark and K. S. Jones, "Strain compensation in boron-indium coimplanted laser thermal processed silicon," J. Appl. Phys., vol. 97, pp. 093525.1-4, Apr. 2005.
13. D. B. Williams and B. C. Carter, "Transmission electron microscopy. II, Diffraction," Plenum Press, cop., New York, USA, 1996.