Ti-silicide formation during isochronal annealing followed by in situ ellipsometry

Microelectronic Engineering

Volumn 55, Issue 1-4, 2001, Pages 101-107

  Stark, T ^a   Gutowski, L ^a   Herden, M ^b   Grunleitner H ^a   Kohler, S ^a   Hundhausen, M ^a   Ley, L ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; COMPOSITION EFFECTS; ELLIPSOMETRY; RAMAN SPECTROSCOPY; RATE CONSTANTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

IN-SITU ELLIPSOMETRY; ISOCHRONAL ANNEALING;

TITANIUM COMPOUNDS;

EID: 0034823540     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00434-2     Document Type: Article

References (12)

1. M. Berti, A.V. Drigo, C. Cohen et al., J. Appl. Phys. 55 (1984) 3558.
2. L.-Y. Chen, X.-W. Feng, Y. Su, H.-Z. Ma, Y.-H. Qian, Appl. Opt. 33 (1994) 1299.
3. L.A. Clevenger, J.M.E. Harper, C. Cabral Jr., C. Nobili, G. Ottaviani, R. Mann, J. Appl. Phys. 72 (1992) 4978.
4. E.G. Colgan, L.A. Clevenger, C. Cabral Jr., Appl. Phys. Lett. 65 (1994) 2009.
5. I. De Wolf, D.J. Howard, A. Lauwers, K. Maex, H.E. Maes, Appl. Phys. Lett. 70 (1997) 2262.
6. G.E. Jellison Jr., Optical Materials 1 (1992) 151.
7. I. Kasko, S. Kal, H. Ryssel, Microelectron. Eng. 37/38 (1997) 455.
8. J.B. Lasky, J.S. Nakos, O.J. Cain, P.J. Geiss, IEEE Trans. Electron. Devices 38 (1991) 262.
9. T. Stark, H. Grünleitner, M. Hundhausen, L. Ley, Thin Solid Films 358 (2000) 73.
10. M. Tanaka, S. Kurita, M. Fujisawa, F. Levy, Phys. Rev. B 43 (1991) 9133.
11. H.G. Tompkins, W.A. McGahan, Spectroscopic Ellipsometry and Reflectometry, Wiley Interscience, New York, 1999.
12. F. Marabelli, private communications, 1999.