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Journal of Applied Physics

Volumn 104, Issue 1, 2008, Pages

Titanium doped silicon layers with very high concentration

(5) Olea, J a Toledano Luque, M a Pastor, D a Gonzalez Diaz G a Martil I a

a UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); DIRECT ENERGY CONVERSION; ELECTRIC CURRENTS; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HALL MOBILITY; ION BOMBARDMENT; ION IMPLANTATION; NONMETALS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SOLAR ENERGY; TITANIUM;

AMERICAN INSTITUTE OF PHYSICS (AIP); H IGH CONCENTRATIONS; HALL EFFECT MEASUREMENTS; HIGH EFFICIENCY; INTERMEDIATE BAND (IB); LASER ANNEALING; MOBILITY VALUES; NEW GENERATION; ROOM-TEMPERATURE (RT); SOLID SOLUBILITIES; TI ATOMS; TITANIUM DOPED; TITANIUM SILICIDE (TISI2);

MAGNETIC FIELD EFFECTS;

EID: 47749083878 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2949258 Document Type: Article

Times cited : (69)

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