Strain compensation in boron-indium coimplanted laser thermal processed silicon

Journal of Applied Physics

Volumn 97, Issue 9, 2005, Pages

  Clark, Mark H ^a   Jones, Kevin S ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CODOPED LAYERS; DEACTIVATION KINETICS; DOPANTS; LASER THERMAL PROCESSED (LTP);

CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; DOPING (ADDITIVES); ION IMPLANTATION; LASER BEAM EFFECTS; LATTICE CONSTANTS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

SEMICONDUCTING SILICON;

EID: 18844404955     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1891282     Document Type: Article

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