Diluted ii-vi oxide semiconductors with multiple band gaps

Physical Review Letters

Volumn 91, Issue 24, 2003, Pages

  Yu, K M ^a   Walukiewicz, W ^a   Wu, J ^a   Shan, W ^a   Beeman, J W ^a   Scarpulla, M A ^a,b   Dubon, O D ^a,b   Becla, P ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ION IMPLANTATION; LASER PULSES; LIGHT REFLECTION; PHOTODIODES; PHOTOVOLTAIC EFFECTS; POSITIVE IONS; RAPID THERMAL ANNEALING; SEMICONDUCTING FILMS; SINGLE CRYSTALS; SOLAR CELLS; ZINC ALLOYS;

BAND ANTICROSSING MODEL; MULTIPLE BAND GAPS; MULTIPRISM HOMOGENIZER; PHOTOMODULATED REFLECTANCE; PULSED LASER MELTING; SEMICONDUCTOR ALLOY; SINGLE JUNCTION PHOTOVOLTAIC; SOLAR ENERGY SPECTRUM;

ENERGY GAP;

EID: 0942279071     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.91.246403     Document Type: Article

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