Pulsed laser melting effects on single crystal gallium phosphide

Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

Volumn , Issue , 2009, Pages 42-45

  Pastor, D ^a   Olea, J ^a   Toledano Luque, M ^a   Martil I ^a   Gonzalez Diaz G ^a   Ibanez J ^b   Cusco R ^b   Artus L ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EFFECTS; CRYSTALLINE DOMAINS; CRYSTALLINITY; ENERGY DENSITIES; GLANCING INCIDENCE X-RAY DIFFRACTIONS; HALL-EFFECT MEASUREMENTS; HIGH-DOSE ION IMPLANTATIONS; INTERMEDIATE BANDS; OUT DIFFUSIONS; PULSE LASERS; PULSED LASERS; RAMAN SPECTRUM; SHEET RESISTIVITIES; SOLID SOLUBILITIES; TEMPERATURE RANGES; VIBRATIONAL MODES;

CRYSTAL IMPURITIES; DIFFRACTION; ELECTRON DEVICES; GALLIUM PHOSPHIDE; HALL EFFECT; ION BOMBARDMENT; ION IMPLANTATION; LASER PULSES; MAGNETIC FIELD EFFECTS; PULSED LASER APPLICATIONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SINGLE CRYSTALS; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 64949120526     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCED.2009.4800425     Document Type: Conference Paper

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