Development of infrared detectors using single carbon-nanotube-based field-effect transistors

IEEE Transactions on Nanotechnology

Volumn 9, Issue 5, 2010, Pages 582-589

  Chen, Hongzhi ^a   Xi, Ning ^a   Lai, King W C ^a   Fung, Carmen K M ^a   Yans, Ruiguo ^a  

^a Michigan State University   (United States)

Author keywords

Carbon nanotube (CNT); Field effect transistor; IR detector; Optoelectronics

Indexed keywords

CARBON-NANOTUBE-BASED FIELD-EFFECT TRANSISTORS; CNT FETS; DEVICE CHARACTERISTICS; IR DETECTOR; IR SENSOR; NANO SCALE; NANOTUBE FIELD EFFECT TRANSISTORS; OPTOELECTRONICS; PROMISING MATERIALS; SINGLE-WALL CARBON NANOTUBES; WORKING PRINCIPLES;

CARBON NANOTUBES; INFRARED DETECTORS; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; OPTOELECTRONIC DEVICES; SENSORS; SILVER; SINGLE-WALLED CARBON NANOTUBES (SWCN);

FIELD EFFECT TRANSISTORS;

EID: 77956629102     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2053216     Document Type: Conference Paper

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