CNT infrared detectors using schottky barriers and p-n junctions based FETs

2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

Volumn , Issue , 2009, Pages 91-95

  Chen, Hongzhi ^a   Xi, Ning ^a   Lai, King W C ^a   Fung, Carmen Kar Man ^a   Yang, Ruiguo ^a  

^a Michigan State University   (United States)

Author keywords

Carbon nanotube (CNT); Infrared (IR) detector; P n junction; Schottky barrier

Indexed keywords

ALUMINUM-GATE; DEPLETION REGION; GATE VOLTAGES; IR DETECTOR; NEGATIVE GATE VOLTAGES; ON/OFF RATIO; P-N JUNCTION; SCHOTTKY BARRIER; SCHOTTKY BARRIERS; SCHOTTKY DIODES;

DETECTORS; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; INFRARED DETECTORS; MESFET DEVICES; NANOTECHNOLOGY; OPEN CIRCUIT VOLTAGE; PHOTOCURRENTS; PHOTODIODES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS;

CARBON NANOTUBES;

EID: 70449635564     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NMDC.2009.5167557     Document Type: Conference Paper

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