High detectivity InAs quantum dot infrared photodetectors

Applied Physics Letters

Volumn 84, Issue 17, 2004, Pages 3277-3279

  Kim, Eui Tae ^a   Madhukar, Anupam ^a   Ye, Zhengmao ^b   Campbell, Joe C ^b  

^a University of Southern California ^*  (United States)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; ENERGY RELAXATION; QUANTUM WELL INFRARED PHOTODETECTORS (QWIP); SPECTRAL WIDTHS;

CHARGE CARRIERS; ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; FREQUENCIES; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; PHOTODETECTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2542428542     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1719259     Document Type: Article

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