Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2817-2819

  Blasco, X ^a   Nafría, Montse ^a   Aymerich, X ^a   Petry J ^b   Vandervorst, W ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IMEC   (Belgium)

Author keywords

Conductive atomic force microscopy (CAFM); Dielectric breakdown; Gate dielectric; HfO2; High ; Reliability; SiO2

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; HAFNIUM COMPOUNDS; MOS DEVICES; NANOSTRUCTURED MATERIALS; PERMITTIVITY; RELIABILITY; SEMICONDUCTOR MATERIALS; SILICA;

CONDUCTIVE ATOMIC FORCE MICROSCOPY (CAFM); DIELECTRIC BREAKDOWN; GATE DIELECTRIC; MOS GATE;

GATES (TRANSISTOR);

EID: 29244462884     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859705     Document Type: Article

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