Physical degradation of gate dielectrics induced by local electrical stress using conductive atomic force microscopy

Journal of Applied Physics

Volumn 106, Issue 2, 2009, Pages

  Polspoel, W ^a   Favia, P ^a   Mody, J ^a   Bender, H ^a   Vandervorst, W ^a,b  

^a IMEC   (Belgium)

^b KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ANALYSIS TECHNIQUES; CHEMICAL COMPOSITIONS; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CONSTANT VOLTAGE STRESS; ELECTRICAL BEHAVIORS; ELECTRICAL STRESS; GROWTH MECHANISMS; MEASURED CURRENTS; NEGATIVE SUBSTRATES; OXIDE DEGRADATION; PHYSICAL NATURE; STRUCTURAL DAMAGES; SURFACE DAMAGES; SURFACE PROTRUSION;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ATOMS; CRYSTAL ATOMIC STRUCTURE; DEGRADATION; ELECTRIC POTENTIAL; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; GATES (TRANSISTOR); MOS CAPACITORS; TRANSMISSION ELECTRON MICROSCOPY;

GATE DIELECTRICS;

EID: 68249152301     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3153965     Document Type: Article

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