SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 23, 2009, Pages

Origin of inverse tunneling magnetoresistance in a symmetric junction revealed by delaminating the buried electronic interface

(8) Yang, J Joshua a Xiang, Hua b Ji, Chengxiang b Stickle, William F a Stewart, Duncan R c Ohlberg, Douglas A A a Williams, R Stanley a Chang, Y Austin b

a HEWLETT PACKARD COMPANY (United States)

b University of Wisconsin Madison (United States)

c NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED INTERFACE; CHEMICAL STRUCTURE; ELECTRICAL PROPERTY; ELECTRONIC DEVICE; ELECTRONIC INTERFACE; ENERGETIC ION; FE OXIDE; ION MILLING; MAGNETIC TUNNEL JUNCTION; MATERIAL INTERFACES; OVEROXIDATIONS; STRUCTURAL INFORMATION; SYMMETRIC JUNCTIONS; TUNNELING MAGNETORESISTANCE; X RAY PHOTOEMISSION SPECTROSCOPY;

DELAMINATION; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; EMISSION SPECTROSCOPY; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MILLING (MACHINING); SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS; TUNNELING (EXCAVATION); WIND TUNNELS;

SURFACE CHEMISTRY;

EID: 71949085275 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3272684 Document Type: Article

Times cited : (5)

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