Dislocation in 4h n+ sic substrates and their relationship with epilayer defects

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 247-250

  Wu, Ping ^a   Emorhokpor, Ejiro ^a   Yoganathan, Murugesu ^a   Kerr, Thomas ^a   Zhang, Jie ^b   Romano, Esteban ^b   Zwieback, Ilya ^a  

^a II VI Inc   (United States)

^b SemiSouth Laboratories Inc   (United States)

Author keywords

4H; Crystal Quality; Dislocation; Epilayer Defects; X ray Rocking Curve

Indexed keywords

DISLOCATIONS (CRYSTALS); EPILAYERS; ETCHING; POTASSIUM HYDROXIDE; SILICON CARBIDE; SILICON WAFERS;

CRYSTAL QUALITIES; CRYSTALLINE QUALITY; DISLOCATION DENSITIES; DISTRIBUTION OF DISLOCATIONS; MORPHOLOGICAL DEFECTS; SUBSTRATE QUALITY; TECHNOLOGICAL IMPROVEMENTS; X RAY ROCKING CURVE;

SUBSTRATES;

EID: 38449112354     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.247     Document Type: Conference Paper

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