Polytype controlled SiC epitaxy on on-axis 6H-SiC(0001) by adding HCl during growth

Electrochemical and Solid-State Letters

Volumn 3, Issue 8, 2000, Pages 381-384

  Xie, Z Y ^a   Chen, S F ^a   Edgar, J H ^a   Barghout, K ^b   Chaudhuri, J ^b  

^a Kansas State University   (United States)

^b Wichita State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; FILM GROWTH; HYDROCHLORIC ACID; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUPERSATURATION;

HOMOEPITAXIAL GROWTH;

SEMICONDUCTING FILMS;

EID: 0034250212     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391154     Document Type: Article

References (18)

1. R. B. Campbell and H. C. Chang, Semiconductors and Semimetals 7, p. 625, Academic Press, New York (1971).
2. R. F. Davis, Physica B, 185, 1 (1993).
3. Silicon Carbide 1973, R. C. Marshall, J. W. Faust, Jr., and C. E. Ryan, Editors, p. 671, University of South Carolina Press, Columbia, SC (1974).
4. P. Das and D. K. Ferry, Solid-State Electron, 19, 851 (1976).
5. H. S. Kong, J. T. Glass, and R. F. Davis, Appl. Phys. Lett., 49, 1074 (1986).
6. J. A. Powell, D. J. Larkin, L. G. Matus, W. J. Choyke, J. L. Bradshaw, L. Henderson, M. Yoganathan, J. Yang, and P. Pirouz, Appl. Phys. Lett., 56, 1353 (1990).
7. H. S. Kong, J. T. Glass, and R. F. Davis, J. Mater. Res., 4, 204 (1989).
8. V. J. Jennings, A. Sommer, and H. Chang, J. Electrochem. Soc., 113, 728 (1966).
9. W. von Muench and I. Phaffeneder, Thin Solid Films, 31, 39 (1976).
10. N. Kuroda, K. Shibahara, W. S. Yoo, S. Nishino, and H. Matsunami, p. 227, Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, Japan, 1987.
11. H. S. Kong, H. J. Kim, J. A. Edmond, J. W. Palmour, J. Ryu, C. H. Carter, Jr., J. T. Glass, and R. F. Davis, Mater. Res. Soc. Symp. Proc., 97, 233 (1987).
12. K. Shibahara, N. Kuroda, S. Nishino, and H. Matsunami, Jpn. J. Appl. Phys. Part 2, 26, L1815 (1987).
13. C. Hallin, A. O. Konstantinov, O. Kordina, and E. Janzén, p. 85, 1995 IOP Conference Series, Kyoto, Japan, 1995.
14. A. O. Konstantinov, C. Hallin, O. Kordina, and E. Janzén, J. Appl. Phys., 80, 5704 (1996).
15. J. A. Powell, J. B. Petit, J. H. Edgar, J. Larkin, L. G. Matus, W. J. Choyke, J. L. Bradshaw, L. Henderson, M. Yoganathan, J. Yang, and P. Pirouz, Appl. Phys. Lett., 56, 1353 (1990).
16. J. A. Powell, J. B. Petit, J. H. Edgar, I. G. Jenkins, L. G. Matus, J. W. Yang, P. Pirouz, W. J. Choyke, L. Clemen, and M. Yoganathan, Appl. Phys. Lett., 59, 333 (1991).
17. Z. Y. Xie, J. H. Edgar, K. Barghout, and J. Chaudhuri, J. Cryst. Growth, Submitted.
18. J. A. Powell, J. B. Petit, J. H. Edgar, I. G. Jenkins, L. G. Matus, W. J. Choyke, L. Clemen, M. Yoganathan, J. W. Yang, and P. Pirouz, Appl. Phys. Lett., 59, 183 (1991).