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Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 219-222

Predicting growth rates of SiC epitaxial layers grown by hot-wall chemical vapor deposition

(4) Danielsson, O a Jonsson S a Henry, A a Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

CVD; Epitaxial growth; Growth rate; Simulation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECTS; GROWTH RATE; OPTIMIZATION; SILICON CARBIDE;

CHEMISTRY MODELING; GROWTH CHAMBER; HORIZONTAL REACTORS; HOT WALL CHEMICAL VAPOR DEPOSITION; MORPHOLOGICAL DEFECTS; PRECISE CONTROL; SIMULATION; THREE DIMENSIONS;

EPITAXIAL GROWTH;

EID: 0005714098 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028Avww.scientiflc.net/MSF.389-393.219 Document Type: Conference Paper

Times cited : (5)

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