Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 274-279

  Compagnoni, Christian Monzio ^a   Chiavarone, Luca ^b   Calabrese, Marcello ^a   Gusmeroli, Riccardo ^a   Ghidotti, Michele ^a   Lacaita, Andrea L ^a,c   Spinelli, Alessandro S ^a,c   Visconti, Angelo ^b  

^a POLITECNICO DI MILANO   (Italy)

^b Numonyx   (Italy)

^c IFN CNR   (Italy)

Author keywords

Channel hot electron programming; Electron injection statistics; Flash memories; Semiconductor device modeling

Indexed keywords

ANALYTICAL MODEL; CHANNEL HOT-ELECTRON PROGRAMMING; ELECTRON INJECTION STATISTICS; ELECTRON TRANSFER; FLOATING GATES; NOR FLASH MEMORY; POISSONIAN; PROGRAMMING ALGORITHMS; RANDOM TELEGRAPH NOISE; SCALING TRENDS; SEMICONDUCTOR DEVICE MODELING; THRESHOLD VOLTAGE DISTRIBUTION; THRESHOLD VOLTAGE SHIFTS;

COMPUTER CRIME; ELECTRON INJECTION; ELECTRONS; NOISE POLLUTION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; TELEGRAPH; THRESHOLD VOLTAGE;

FLASH MEMORY;

EID: 70449112707     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173263     Document Type: Conference Paper

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