Enhancement of optical properties of InAs quantum dots grown by using periodic arsine interruption

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 3963-3966

  Kim, Jungsub ^a   Yang, Changjae ^a   Sim, Uk ^a   Lee, Jaeyel ^a   Yoon, Euijoon ^a   Lee, Youngsoo ^b  

^a Seoul National University   (South Korea)

^b Korea Military Academy   (South Korea)

Author keywords

InAs; Large island; PAI; Periodic arsine interruption; Quantum dot

Indexed keywords

INAS; LARGE ISLAND; PAI; PERIODIC ARSINE INTERRUPTION; QUANTUM DOT;

ASPECT RATIO; INDIUM ARSENIDE; MOS CAPACITORS; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 65449143865     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.170     Document Type: Article

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