Effect of oxygen pressure on the structural and optical properties of ZnO thin films on Si (111) by PLD

Vacuum

Volumn 83, Issue 5, 2009, Pages 906-909

  Zhaoyang, Wang ^a   Lizhong, Hu ^b  

^a SHENYANG AEROSPACE UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Oxygen pressure; Pulsed laser deposition; UV emission; ZnO thin films

Indexed keywords

CADMIUM; EMISSION SPECTROSCOPY; HELIUM; LASERS; LEAKAGE (FLUID); LIGHT EMISSION; LUMINESCENCE; METALLIC FILMS; OPTICAL MATERIALS; OPTICAL PROPERTIES; OXYGEN; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICON; THICK FILMS; THIN FILMS; ZINC; ZINC ALLOYS; ZINC OXIDE;

AFM MEASUREMENTS; CRYSTALLINITY; EFFECT OF OXYGENS; GREEN BANDS; MORPHOLOGICAL PROPERTIES; OXYGEN PRESSURE; OXYGEN PRESSURES; PHOTOLUMINESCENCE SPECTRUMS; PULSED LASERS; SI(111); SI(111) SUBSTRATES; UV EMISSION; UV EMISSIONS; ZNO THIN FILMS;

OPTICAL FILMS;

EID: 56949089546     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2008.08.008     Document Type: Article

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