Effect of annealing on ZnO thin films grown on (001) silicon substrate by low-pressure metalorganic chemical vapour deposition

Semiconductor Science and Technology

Volumn 19, Issue 6, 2004, Pages 755-758

  Zhang, Yuantao ^a   Du, Guotong ^a   Yang, Xiaotian ^a   Zhao, Baijun ^a   Ma, Yan ^a   Yang, Tianpeng ^a   Ong, H C ^b   Liu, Dali ^a   Yang, Shuren ^a  

^a JILIN UNIVERSITY   (China)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTODETECTORS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SILICON; STOICHIOMETRY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

EPITAXY FILMS; SILICON SUBSTRATES; STOICHIOMETRIC RATIO;

THIN FILMS;

EID: 2942587535     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/6/017     Document Type: Article

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