Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Wang, Xinqiang ^a   Tomita, Yosuke ^a   Roh, Ok Hwan ^a   Ohsugi, Masayuki ^a   Che, Song Bek ^a   Ishitani, Yoshihiro ^a   Yoshikawa, Akihiko ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; ETCHING; FABRICATION; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; NITRIDING; OPTOELECTRONIC DEVICES; X RAY DIFFRACTION ANALYSIS;

COAXIAL IMPACT COLLISION ION SCATTERING SPECTROSCOPY (CAICISS); DANGLING BONDS; POLARITY; TIME-OF-FLIGHT (TOF);

ZINC OXIDE;

EID: 19744382940     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1846951     Document Type: Article

References (21)

1. D. C. Look, Mater. Sci. Eng., B 80, 383 (2001).
2. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, Prog. Mater. Sci. 50, 293 (2005).
3. D. C. Look, B. Claflin, Ya. I. Alivov, and S. J. Park, Phys. Status Solidi A 201, 2203 (2004).
4. M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, Phys. Status Solidi B 228, 505 (2001).
5. A. Yoshikawa and K. Xu, Opt. Mater. (Amsterdam, Neth.) 23, 7 (2003).
6. D. Huang, P. Visconti, K. M. Jones, M. A. Reshchikov, F. Yun, A. A. Baski, T. King, and H. Morkoc, Appl. Phys. Lett. 78, 4145 (2001).
7. X. Q. Shen, T. Ide, S. H. Cho, M. Shimizu, S. Hara, and H. Okumura, Appl. Phys. Lett. 77, 4013 (2000).
8. A. Yoshikawa and K. Xu, Thin Solid Films 412, 38 (2002).
9. D. Huang, M. A. Reshchikov, P. Visconti, F. Yun, A. A. Baski, T. King, H. Morkoc, J. Jasinki, Z. Liliental-Weber, and C. W. Litton, J. Vac. Sci. Technol. B 20, 2256 (2002).
10. Z. Q. Fang, D. C. Look, P. Visconti, D. F. Wang, C. Z. Lu, F. Yun, H. Morkoc, S. S. Park, and K. Y. Lee, Appl. Phys. Lett. 78, 2178 (2001).
11. L. K. Li, M. J. Jurkovic, W. I. Wang, J. M. Van Hove, and P. P. Chow, Appl. Phys. Lett. 76, 1740 (2000).
12. X. Wang, H. Iwaki, M. Murakami, X. Du, Y. Ishitani, and A. Yoshikawa, Jpn. J. Appl. Phys., Part 2 42, L99 (2003).
13. S. K. Hong, T. Hanada, H. J. Ko, Y. Chen, T. Yao, D. Imai, K. Araki, and M. Shinohara, Appl. Phys. Lett. 77, 3571 (2000).
14. T. Ohnishi, A. Ohtomo, I. Ohkuboa, M. Kawasaki, M. Yoshimoto, and H. Koinuma, Mater. Sci. Eng., B 56, 256 (1998).
15. T. Ohnishi, A. Ohtomo, M. Kawasaki, K. Takahashi, M. Yoshimoto, and H. Koinuma, Appl. Phys. Lett. 72, 824 (1998).
16. S. Sonoda, S. Shinizu, Y. Suzuki, K. Balakrishnan, J. Shirakashi, H. Okumura, T. Nishikara, and M. Shinohara, Jpn. J. Appl. Phys., Part 2 38, L1219 (1999).
17. V. Ramachandran, R. M. Feenstra, W. L. Sarney, L. Salamanca-Riba, J. E. Northrup, L. T. Romano, and D. W. Greve, Appl. Phys. Lett. 75, 808 (1999).
18. I. Ohkubo, A. Ohtomo, T. Ohnishi, Y. Mastumoto, H. Koinuma, and M. Kawasaki, Surf. Sci. 443, L1043 (1999).
19. H. Kato, M. Sano, K. Miyamoto, and T. Yao, J. Cryst. Growth 265, 375 (2004).
20. Y. Golan, X. H. Wu, J. S. Speck, R. P. Vaudo, and V. M. Phanse, Appl. Phys. Lett. 73, 3090 (1998).
21. M. N. Mariano and R. E. Hanneman, J. Appl. Phys. 34, 384 (1961).