Combined structure of ZnO vertical well-aligned nanorods and net-like structures on AIN/sapphire

Journal of Crystal Growth

Volumn 306, Issue 1, 2007, Pages 12-15

  Wei, H Y ^a   Cong, G W ^a   Zhang, P F ^a   Hu, W G ^a   Wu, J J ^a   Jiao, C M ^a   Liu, X L ^a   Zhu, Q S ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Nanostructure; A3. OMVPE; B2. Semiconducting II VI materials

Indexed keywords

SEMICONDUCTING II-VI MATERIALS; UV PEAKS; WELL-ALIGNED NANORODS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

NANORODS;

EID: 34447530490     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.04.049     Document Type: Article

References (26)

1. Tsukazaki A., Ohtomo A., Onuma T., Ohtani M., Makino T., Sumiya M., Ohtani K., Chichibu S.F., Fuke S., Segawa Y., Ohno H., Koinuma H., and Kawasaki M. Nature Mater. 4 (2005) 42
2. Huang M.H., Mao S., Feick H., Yan H., Wu Y., Kind H., Weber E., Russo R., and Yang P. Science 292 (2001) 1897
3. Pan Z.W., Dai Z.R., and Wang Z.L. Science 291 (2001) 1947
4. Tong Y.H., Liu Y.C., Shao C.L., and Mu R.X. Appl. Phys. Lett. 88 (2006) 123111
5. Xu W.Z., Ye Z.Z., Ma D.W., Lu H.M., Zhu L.P., Zhao B.H., Yang X.D., and Xu Z.Y. Appl. Phys. Lett. 87 (2005) 093110
6. Liu Z.W., Ong C.K., Yu T., and Shen Z.X. Appl. Phys. Lett. 88 (2006) 053110
7. Su X., Zhang Z.J., and Zhu M.M. Appl. Phys. Lett. 88 (2006) 061913
8. Le H.Q., Chua S.J., Koh Y.W., Loh K.P., Chen Z., Thompson C.V., and Fitzgerald E.A. Appl. Phys. Lett. 87 (2005) 101908
9. Law J.B.K., and Thong J.T. Appl. Phys. Lett. 88 (2006) 133114
10. Han S.W., and Yoo H.J. Appl. Phys. Lett. 88 (2006) 111910
11. Levin I., Davydov A., Nikoobakht B., Sanford N., and Mogilevsky P. Appl. Phys. Lett. 87 (2005) 103110
12. Cong G.W., Wei H.Y., Zhang P.F., Peng W.Q., Wu J.J., Liu X.L., Jiao C.M., Hu W.G., Zhu Q.S., and Wang Z.G. Appl. Phys. Lett. 87 (2005) 231903
13. Lau S.P., Yang H.Y., Yu S.F., and Li H.D. Appl. Phys. Lett. 87 (2005) 013104
14. Wang L., Zhang X., Zhao S., Zhou G., Zhou Y., and Qi J. Appl. Phys. Lett. 86 (2005) 024108
15. Wang L., Pu Y., Chen Y.F., Mo C.L., Fang W.Q., Xiong C.B., Dai J.N., and Jiang F.Y. J. Crystal Growth 284 (2005) 459
16. Bundesmann C., Ashkenov N., Schubert M., Spemann D., Butz T., and Kaidashev E.M. Appl. Phys. Lett. 83 (2003) 1974
17. Tischler J.G., and Freitas Jr. J.A. Appl. Phys. Lett. 85 (2004) 1943
18. Ashkenov N., Mbenkum B.N., and Bundesmann C. J. Appl. Phys. 93 (2003) 126
19. Zhao Q., Zhang H., Xu X., Wang Z., Xu J., and Yu D. Appl. Phys. Lett. 86 (2005) 193101
20. Zhao D.G., Xu S.J., Xie M.H., Tong S.Y., and Yang H. Appl. Phys. Lett. 83 (2003) 677
21. Gruber T., Prinz G.M., Kirchner C., Kling R., Reuss F., Limmer W., and Waag A. J. Appl. Phys. 96 (2004) 289
22. Özgür U., Alivov I., Teke A., Reshchikov M.A., Goǧan S., Avrutin V., Cho S.-J., and Morkoc H. J. Appl. Phys. 98 (2005) 041301
23. Wang X.Q., Tomita Y., Roh O.-H., Ohsugi M., Che S.-B., Ishitani Y., and Yoshikawa A. Appl. Phys. Lett. 86 (2005) 011921
24. Tavernier P.R., Verghese P.M., and Clarke D.R. Appl. Phys. Lett. 74 (1999) 2678
25. Coleman V.A., Bradby J.E., Jagadish C., and Phillips M.R. Appl. Phys. Lett. 89 (2006) 082102
26. T.-B. Hur, Y.-H. Hwang, H.-K. Kim, I.J. Lee, J. Appl. Phys. 99, 064308.