Temperature dependent photoluminescence characteristics of nanocrystalline ZnO films grown by sol-gel technique

Thin Solid Films

Volumn 516, Issue 23, 2008, Pages 8702-8706

  Mandal, S ^a   Goswami, M L N ^a   Das, K ^a   Dhar, A ^a   Ray, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Photoluminescence; sol gel synthesis; X ray diffraction; ZnO

Indexed keywords

COLLOIDS; DIFFRACTION; ELECTRON DIFFRACTION; EMISSION SPECTROSCOPY; GELATION; GELS; HOLOGRAPHIC INTERFEROMETRY; LEAKAGE (FLUID); LIGHT EMISSION; LUMINESCENCE; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; NONMETALS; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICON; SOL-GEL PROCESS; SOL-GELS; SOLS; THICK FILMS; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

ANNEALED FILMS; GREEN EMISSIONS; GREEN-BAND EMISSION; NANOCRYSTALLINE ZNO; OXYGEN CONTENTS; PHOTOLUMINESCENCE SPECTRA; SELECTED-AREA ELECTRON DIFFRACTION; SHAPED PARTICLES; SI(100); SOL-GEL SYNTHESIS; SOL-GEL TECHNIQUES; TEMPERATURE DEPENDENT PHOTOLUMINESCENCE; TEMPERATURE RANGES; ULTRA-VIOLET; WURTZITE STRUCTURES; X-RAY DIFFRACTION; X-RAY DIFFRACTION PATTERNS; ZNO; ZNO FILMS; ZNO THIN FILMS;

METALLIC FILMS;

EID: 50849130874     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.05.016     Document Type: Article

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