Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 247, Issue 1-2, 2003, Pages 99-104

  Luo, X D ^a,b   Xu, Z Y ^a,b   Wang, Y Q ^b   Wang, W X ^b   Wang, J N ^b   Ge, W K ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

A1. Growth interruption; A3. Molecular beam epitaxy; A3. Quantum dots; B1. GaSb

Indexed keywords

MORPHOLOGY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; STRESS RELAXATION;

GROWTH INTERRUPTION (GI) EFFECTS;

MOLECULAR BEAM EPITAXY;

EID: 0037211181     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01971-1     Document Type: Article

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