MOCVD growth of ZnO films on Si(1 1 1) substrate using a thin AlN buffer layer

Journal of Crystal Growth

Volumn 284, Issue 3-4, 2005, Pages 459-463

  Wang, L ^a   Pu, Y ^a   Chen, Y F ^a   Mo, C L ^a   Fang, W Q ^a   Xiong, C B ^a   Dai, J N ^a   Jiang, F Y ^a  

^a NANCHANG UNIVERSITY   (China)

Author keywords

A1. In situ reflectance measurement; A1. Photoluminescence; A1. XRD; A3. MOCVD; B2. ZnO

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; REFLECTION; SILICON; SINGLE CRYSTALS; SUBSTRATES; THERMAL EXPANSION; THIN FILMS; X RAY DIFFRACTION;

BUFFER LAYERS; IN SITU REFLECTANCE MEASUREMENTS; LATTICE MISMATCH;

ZINC OXIDE;

EID: 26044480070     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.06.058     Document Type: Article

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