ZnO epitaxial layers grown on nitridated Si(1 0 0) substrate with HT-GaN/LT-ZnO double buffer

Journal of Crystal Growth

Volumn 310, Issue 2, 2008, Pages 290-294

  Chang, S P ^a   Chang, S J ^a   Chiou, Y Z ^b   Lu, C Y ^a   Lin, T K ^a   Kuo, C F ^a   Chang, H M ^a   Liaw, U H ^c  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c CHINA INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

A1. Nano island; A3. MBE; B1. GaN buffer; B1. ZnO; B2. Si wafer

Indexed keywords

BUFFER LAYERS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SILICON WAFERS; SUBSTRATES; ZINC OXIDE;

DOUBLE BUFFER LAYERS; NANO-ISLANDS;

EPITAXIAL LAYERS;

EID: 37349076563     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.10.029     Document Type: Article

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