Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2187-2190

  Lee, W C ^a   Chin, B H ^a   Chu, L K ^a   Lin, T D ^a   Lee, Y J ^a   Tung, L T ^a   Lee, C H ^a   Hong, M ^a   Kwo, J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

A1. Germanium; A3. Molecular beam epitaxy (MBE); B1. Aluminum oxide; B1. Hafnium oxide; B2. High dielectric; B3. Metal oxide semiconductor capacitors (MOSCAP)

Indexed keywords

ALUMINA; ALUMINUM; CAPACITANCE; CAPACITORS; CRYSTAL GROWTH; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; GERMANIUM; HAFNIUM; HAFNIUM COMPOUNDS; METALS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOLECULAR SPECTROSCOPY; MOS CAPACITORS; OXIDES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

A1. GERMANIUM; A3. MOLECULAR BEAM EPITAXY (MBE); B1. ALUMINUM OXIDE; B1. HAFNIUM OXIDE; B3. METAL-OXIDE-SEMICONDUCTOR CAPACITORS (MOSCAP);

SEMICONDUCTING GERMANIUM;

EID: 63349106492     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.045     Document Type: Article

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