Quantum fluctuations in atomistic semiconductor devices

Superlattices and Microstructures

Volumn 34, Issue 3-6, 2003, Pages 361-366

  Barker, J R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Atomistic silicon devices; Green functions; Quantum transport

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; ELECTRIC FIELD EFFECTS; ELECTROMAGNETIC WAVE SCATTERING; GREEN'S FUNCTION; IMPURITIES; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SATURATION (MATERIALS COMPOSITION); SCATTERING; SILICON;

ATOMISTIC SILICON DEVICES; DOPANTS; MULTIPLE SCATTERING; QUANTUM TRANSPORT;

SEMICONDUCTOR SUPERLATTICES;

EID: 3242696889     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.03.028     Document Type: Conference Paper

References (8)

1. Barker J.R. Physica E. 19:2003;62.
2. Barker J.R. J. Computational Electronics. 2:2003;153-161.
3. Asenov A., Saini S. IEEE Trans. Electron Dev. 47:2000;805.
4. Svizhenko A., Anatram M.P., Govindan T.R., Biegel B., Venugopal R. J. Appl. Phys. 91:2002;2343.
5. N. Nguyen, Ph.D. Thesis, Stanford University, 1984.
6. Stern F. Phys. Rev. B. 5:1976;4891.
7. Barker J.R. J. Computational Electronics. 1:2002;17 Microelectron. Eng. 63:2002;223.
8. Barker J.R. J. Computational Electronics. 1:2002;17 Microelectron. Eng. 63:2002;223.