3-D Monte Carlo simulation of the impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs

IEEE Transactions on Nanotechnology

Volumn 6, Issue 1, 2007, Pages 48-55

  Riddet, Craig ^b   Brown, Andrew R ^b   Alexander, Craig L ^b   Watling, Jeremy R ^b   Roy, Scott ^b   Asenov, Asen ^a,b  

^a IEEE

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Double gate MOSFET; Monte Carlo; Numerical simulation; Quantum corrections; Variability

Indexed keywords

LIGHT SCATTERING; MONTE CARLO METHODS; QUANTUM THEORY; SEMICONDUCTOR DEVICES; SILICON; SURFACE ROUGHNESS;

DOUBLE GATE MOSFET; QUANTUM CORRECTIONS; THICKNESS FLUCTUATIONS;

MOSFET DEVICES;

EID: 33846640500     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.886739     Document Type: Article

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