Effects of CF4 plasma treatment on the electrical characteristics of poly-silicon TFTs using a Tb2O3 gate dielectric

IEEE Transactions on Electron Devices

Volumn 57, Issue 7, 2010, Pages 1519-1526

  Pan, Tung Ming ^a   Li, Zhi Hong ^a   Deng, Chih Kang ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

CF4plasma power; high k; interface trap density; Tb2O3; thin film transistors (TFTs)

Indexed keywords

CURRENT RATIOS; DRIVING CURRENT; EFFECTIVE CARRIER MOBILITY; ELECTRICAL CHARACTERISTIC; ELECTRICAL RELIABILITY; FLUORINE ATOMS; INTERFACE TRAP DENSITY; LOW THRESHOLDS; LOW-TEMPERATURE POLY-SI; PLASMA POWER; PLASMA TREATMENT; POLY-SI; POLY-SI TFTS; POLY-SI THIN-FILM TRANSISTORS; POSITIVE BIAS TEMPERATURE INSTABILITIES; STATE DENSITIES; SUBTHRESHOLD SLOPE;

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; FLUORINE; GATE DIELECTRICS; GATES (TRANSISTOR); PLASMA DIAGNOSTICS; PLASMA STABILITY; PLASMAS; POLYSILICON; TERBIUM ALLOYS;

THIN FILM TRANSISTORS;

EID: 77954030242     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2047904     Document Type: Article

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