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Volumn 9, Issue 3, 2001, Pages 169-172

Current and future technology of low-temperature poly-Si TFT-LCDs

Author keywords

Excimer laser annealing; Low temperature poly Si; PE CVD; TFT LCDs

Indexed keywords


EID: 0012258197     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/1.1828784     Document Type: Article
Times cited : (46)

References (7)
  • 1
    • 0039187285 scopus 로고
    • A 240 x 360 element active matrix LCD with integrated gate-bus drivers using poly-Si TFTs
    • Y Oana, "A 240 x 360 Element Active Matrix LCD with Integrated Gate-Bus Drivers using Poly-Si TFTs," Proc 4th Intl Display Research Conf, 312-315 (1984).
    • (1984) Proc 4th Intl Display Research Conf , pp. 312-315
    • Oana, Y.1
  • 2
    • 0003352470 scopus 로고    scopus 로고
    • Development of a 15-in. UXGA low-temperature poly-Si TFT-LCD
    • T Higuchi et al, "Development of a 15-in. UXGA Low-Temperature Poly-Si TFT-LCD," SID Intl Symp Digest Tech Papers, 11121-1123 (2000).
    • (2000) SID Intl Symp Digest Tech Papers , pp. 11121-11123
    • Higuchi, T.1
  • 3
    • 0012279678 scopus 로고    scopus 로고
    • Excimer-laser processed crystal Si TFTs on glass
    • M Matsumura, "Excimer-Laser Processed Crystal Si TFTs on Glass," Proc Euro Display, 351-356 (1999).
    • (1999) Proc Euro Display , pp. 351-356
    • Matsumura, M.1
  • 5
    • 0011948451 scopus 로고    scopus 로고
    • Low-temperature poly-silicon TFT technology and its application to 12.1-inch XGA
    • K Suzuki et al, "Low-temperature poly-silicon TFT technology and its application to 12.1-inch XGA," AMLCD '98 Digest, 5-8 (1998).
    • (1998) AMLCD '98 Digest , pp. 5-8
    • Suzuki, K.1
  • 6
    • 0038615058 scopus 로고    scopus 로고
    • 2 films prepared by TEOS based PECVD
    • 2 films prepared by TEOS based PECVD," AMLCD '99 Digest, 143-146 (1999).
    • (1999) AMLCD '99 Digest , pp. 143-146
    • Goto, M.1
  • 7
    • 0032137394 scopus 로고    scopus 로고
    • Low-temperature single-crystal Si TFTs fabricated on si films processed via sequential lateral solidification
    • J S Im et al, "Low-Temperature Single-Crystal Si TFTs Fabricated on Si Films Processed via Sequential Lateral Solidification," IEEE Electron Dev Lett 19, No. 8, 306-308 (1998).
    • (1998) IEEE Electron Dev Lett , vol.19 , Issue.8 , pp. 306-308
    • Im, J.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.