SCOPUS 정보 검색 플랫폼

Electrochemical and Solid-State Letters

Volumn 5, Issue 8, 2002, Pages

Performance improvement of excimer laser annealed poly-Si TFTs using fluorine ion implantation

(2) Fan, Ching Lin a Chen, Mao Chieh a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; ELECTRON TRAPS; EXCIMER LASERS; FLUORINE; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); ION IMPLANTATION; LASER BEAM EFFECTS; PASSIVATION; POLYSILICON; SECONDARY ION MASS SPECTROMETRY; STRESS RELAXATION;

EXCIMER LASER ANNEALING (ELA);

THIN FILM TRANSISTORS;

EID: 0036685162 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1488017 Document Type: Article

Times cited : (21)

References (20)

1
- 0022719826
- (1986) IEEE Electron Device Lett. , vol.EDL-7 , pp. 276
- Sameshima, T.¹ Usui, S.² Sekiya, M.³

2
- 0001142560
- (1999) J. Appl. Phys. , vol.86 , pp. 5566
- Miyasaka, M.¹ Stoemenos, J.²

3
- 0030574951
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2138
- Fork, D.K.¹ Anderson, G.B.² Boyce, J.B.³ Johnson, R.I.⁴ Mei, P.⁵

4
- 84956259688
- (1991) Jpn. J. Appl. Phys., Part 1 , vol.30 , pp. 3700
- Kuriyama, H.¹ Kiyama, S.² Noguchi, S.³ Kuwahara, T.⁴ Ishida, S.⁵ Nohda, T.⁶ Sano, K.⁷ Iwata, H.⁸ Kawata, H.⁹ Osumi, M.¹⁰ Tsuda, S.¹¹ Nakano, S.¹² Kuwano, Y.¹³

5
- 0030129175
- (1996) IEEE Trans. Electron Devices , vol.ED-43 , pp. 561
- Cao, M.¹ Talwar, S.² Kramer, K.J.³ Sigmon, T.W.⁴ Saraswat, K.C.⁵

6
- 0001103458
- (2000) Jpn. J. Appl. Phys., Part 1 , vol.39 , pp. 1656
- Tsunoda, Y.¹ Sameshima, T.² Higasha, S.³

7
- 0027553864
- (1993) IEEE Electron Device Lett. , vol.EDL-14 , pp. 115
- Chern, H.N.¹ Lee, C.L.² Lei, T.F.³

8
- 0027575227
- (1993) J. Electrochem. Soc. , vol.140 , pp. 1160
- Kouvatsos, D.N.¹ Stevie, F.A.² Jaccodine, R.J.³

9
- 0026168863
- (1991) J. Electrochem. Soc. , vol.138 , pp. 1752
- Kouvatsos, D.¹ Huang, J.G.² Jaccodine, R.J.³

10
- 0025206744
- (1990) IEEE Trans. Electron Devices , vol.ED-37 , pp. 121
- Fujii, E.¹ Senda, K.² Emoto, F.³ Yamamoto, A.⁴ Nakamura, A.⁵ Uemoto, Y.⁶ Kano, G.⁷

11
- 0028587464
- (1994) Mater. Res. Soc. Symp. Proc. , vol.343 , pp. 709
- Anderson, G.B.¹ Boyce, J.B.² Fork, D.K.³ Johnson, R.I.⁴ Mei, P.⁵ Ready, S.E.⁶

12
- 0029274838
- (1995) Jpn. J. Appl. Phys., Part 1 , vol.34 , pp. 1436
- Park, J.W.¹ Ahn, B.T.² Lee, K.³

13
- 0000782864
- (1999) Jpn. J. Appl. Phys., Part 1 , vol.38 , pp. 2247
- Kim, C.H.¹ Jeon, J.H.² Yoo, J.S.³ Park, K.C.⁴ Han, M.K.⁵

14
- 0033736469
- (2000) IEEE Electron Device Lett. , vol.EDL-21 , pp. 301
- Kim, K.W.¹ Cho, K.S.² Ryu, J.I.³ Yoo, K.H.⁴ Jang, J.⁵

15
- 0030259521
- (1996) J. Electrochem. Soc. , vol.143 , pp. 3302
- Yang, C.K.¹ Lei, T.F.² Lee, C.L.³

16
- 0020089602
- (1982) J. Appl. Phys. , vol.53 , pp. 1193
- Levinson, J.¹ Este, G.² Rider, M.³ Scanlon, P.J.⁴ Shepherd, F.R.⁵ Westwood, W.D.⁶

17
- 0024739568
- (1989) IEEE Trans. Electron Devices , vol.ED-36 , pp. 1915
- Proano, R.E.¹ Misage, R.S.² Ast, D.G.³

18
- 4243968042
- (1999) Jpn. J. Appl. Phys., Part 1 , vol.38 , pp. 2251
- Kuan, T.¹ Chou, A.² Kanicki, J.³

19
- 0023961765
- (1988) IEEE Trans. Electron Devices , vol.ED-35 , pp. 152
- Banerjee, S.¹ Sundaresan, R.² Shichijo, H.³ Malhi, S.⁴

20
- 0027591006
- (1993) IEEE Trans. Electron Devices , vol.ED-40 , pp. 890
- Hack, M.¹ Lewis, A.G.² Wu, I.W.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.