High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structure

IEEE Electron Device Letters

Volumn 22, Issue 6, 2001, Pages 269-271

  Lin, Ching Wei ^b   Cheng, Li Jing ^b   Lu, Yin Ng ^b   Lee, Yih Shing ^c   Cheng, Huang Chung ^a,b  

^a IEEE

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Excimer laser crystallization (ELC); Recessed channel (RC); Thin film transistor (TFT)

Indexed keywords

CRYSTALLIZATION; EXCIMER LASERS; FABRICATION; GRAIN GROWTH; IRRADIATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SCANNING ELECTRON MICROSCOPY;

EXCIMER LASER CRYSTALLIZATION (ELC); RECESSED-CHANNEL (RC) STRUCTURES;

THIN FILM TRANSISTORS;

EID: 0035362504     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.924838     Document Type: Article

References (16)

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