Bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/ Si O2 stack gate dielectrics

Journal of Applied Physics

Volumn 103, Issue 8, 2008, Pages

  Zhu, Shiyang ^a   Nakajima, Anri ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; SILICA; SILICON NITRIDE;

BIAS TEMPERATURE INSTABILITY; BTI LIFETIME; SI O2 STACK DIELECTRICS;

MOSFET DEVICES;

EID: 43049126192     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2907768     Document Type: Article

References (22)

1. D. K. Schroder and J. A. Babcock, J. Appl. Phys. 94, 1 (2003).
2. N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C. T. Liu, R. C. Keller, and T. Horiuchi, 2000 Symposium on VLSI Technology, 2000 (unpublished), p. 92.
3. C. H. Ang, C. M. Lek, S. S. Tan, B. J. Cho, T. Chen, W. Lin, and J. Z. Zhen, Jpn. J. Appl. Phys., Part 2 41, L314 (2002).
4. T. Sasaki, K. Kuwazawa, K. Tanaka, J. Kato, and D. L. Kwong, IEEE Electron Device Lett. 24, 150 (2003).
5. V. Huard, M. Denais, F. Perrier, N. Revil, C. Parthasarathy, A. Bravaix, and E. Vincent, Microelectron. Reliab. 45, 83 (2005).
6. B. Kaczer, V. Arkhipov, M. Jurczak, and G. Groeseneken, Microelectron. Eng. 80, 122 (2005).
7. A. Nakajima, Q. D. M. Khosru, T. Kasai, and S. Yokoyama, IEEE Electron Device Lett. 24, 472 (2003).
8. Q. D. M. Khosru, A. Nakajima, T. Yoshimoto, and S. Yokoyama, IEEE Electron Device Lett. 23, 179 (2002).
9. A. Nakajima, Q. D. M. Khosru, T. Yoshimoto, and S. Yokoyama, Microelectron. Reliab. 42, 1823 (2002).
10. A. Nakajima, T. Ohashi, S. Y. Zhu, S. Yokoyama, S. Michimata, and H. Miyake, IEEE Electron Device Lett. 26, 538 (2005).
11. S. Y. Zhu, A. Nakajima, T. Ohashi, and H. Miyake, Jpn. J. Appl. Phys., Part 1 46, 1874 (2007).
12. G. Ribes, J. Mitard, M. Denais, S. Bruyere, F. Monsieur, C. Parthasarathy, E. Vincent, and G. Ghibaudo, IEEE Trans. Device Mater. Reliab. 5, 5 (2005).
13. S. Y. Zhu, A. Nakajima, T. Ohashi, and H. Miyake, Jpn. J. Appl. Phys., Part 2 44, L60 (2005).
14. S. Y. Zhu, A. Nakajima, T. Ohashi, and H. Miyake, J. Appl. Phys. 98, 114504 (2005).
15. S. Ogawa and N. Shiono, Phys. Rev. B 51, 4218 (1995).
16. M. Denais, V. Huard, C. Parthasarathy, G. Ribes, F. Perrier, N. Revil, and A. Bravaix, IEEE Trans. Device Mater. Reliab. 4, 715 (2004).
17. A. K. Kang, P. M. Lenahan, and J. F. Conley, Appl. Phys. Lett. 83, 3407 (2003).
18. S. Y. Zhu, A. Nakajima, T. Ohashi, and H. Miyake, J. Appl. Phys. 99, 064510 (2006).
19. Y. Mitani, M. Nagamine, H. Satake, and A. Toriumi, Tech. Dig.-Int. Electron Devices Meet. 2002, 509.
20. S. S. Tan, T. P. Chen, C. H. Ang, and L. Chan, Microelectron. Reliab. 45, 19 (2005).
21. G. Chen, M. F. Li, C. H. Ang, J. Z. Zheng, and D. L. Kwong, IEEE Electron Device Lett. 23, 734 (2002).
22. S. Y. Zhu, A. Nakajima, T. Ohashi, and H. Miyake, IEEE Trans. Electron Devices 53, 1805 (2006).