Modeling the equivalent oxide thickness of Surrounding Gate SOI devices with high-κ insulators

Solid-State Electronics

Volumn 52, Issue 12, 2008, Pages 1854-1860

  Tienda Luna, I M ^a   Garcia Ruiz F J ^a   Donetti, L ^a   Godoy, A ^a   Gamiz F ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

EOT; GAA; High ; MuG; SGT; SOI

Indexed keywords

CAPACITANCE; METAL INSULATOR BOUNDARIES; QUANTUM ELECTRONICS; QUANTUM THEORY;

EOT; GAA; MUG; SGT; SOI;

MOSFET DEVICES;

EID: 56049120526     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.059     Document Type: Article

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