Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition

Surface and Coatings Technology

Volumn 204, Issue 18-19, 2010, Pages 2923-2927

  Matsuoka, M ^a   Isotani, S ^a   Sucasaire, W ^a   Zambom, L S ^b   Ogata, K ^c  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b FACULDADE DE TECNOLOGIA DE SÃO PAULO   (Brazil)

^c NISSIN ELECTRIC CO LTD   (Japan)

Author keywords

Chemical vapor deposition; Silicon nitride coating; X ray photoelectron spectroscopy

Indexed keywords

BONDING STRUCTURE; CHEMICAL BONDINGS; CHEMICAL COMPOSITIONS; DEPOSITED FILMS; EXCESS NITROGEN; GAS-FLOW RATIO; GROWING FILMS; HIGH REACTIVITY; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION; OXYNITRIDES; PROCESS PARAMETERS; RF-POWER; SI (100) SUBSTRATE; SILICON NITRIDE COATING; SILICON NITRIDE FILM; XPS SPECTRA;

AERODYNAMICS; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; COATINGS; ELECTROMAGNETIC INDUCTION; ELECTRONS; FILM PREPARATION; FLOW OF GASES; GASES; INDUCTIVELY COUPLED PLASMA; OXYGEN; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; PLASMA DEPOSITION; SILICON; SILICON NITRIDE; SILICON OXIDES; X RAYS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77953361086     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2010.02.071     Document Type: Article

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