Influence of deposition conditions on mechanical properties of low-pressure chemical vapor deposited low-stress silicon nitride films

Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6915-6922

  Toivola, Yvete ^a   Thurn, Jeremy ^a,b   Cook, Robert F ^a   Cibuzar, Greg ^a   Roberts, Kevin ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

^b SEAGATE TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INCIDENT BEAMS; LOAD-DISPLACEMENT;

CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INDENTATION; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; SINGLE CRYSTALS; TENSILE STRESS; THERMAL EXPANSION; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON NITRIDE;

EID: 0345377483     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622776     Document Type: Article

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