SCOPUS 정보 검색 플랫폼

Vacuum

Volumn 65, Issue 2, 2002, Pages 213-220

Silicon nitride deposited by inductively coupled plasma using silane and nitrogen

(3) Da Silva Zambom, Luís a Domingues Mansano, Ronaldo a Furlan, Rogério a

a UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

CVD; FTIR; Plasma deposition; Silicon nitride; Surface stress

Indexed keywords

CHEMICAL BONDS; DEPOSITION; ELECTRIC CONDUCTIVITY; INDUCTIVELY COUPLED PLASMA; NITROGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILANES; SILICON NITRIDE; STOICHIOMETRY; STRESS ANALYSIS;

SURFACE STRESSES;

THIN FILMS;

EID: 0037134134 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/S0042-207X(01)00476-6 Document Type: Article

Times cited : (29)

References (26)

1
- 0008801299
- (1991) J Phys II , vol.1 , pp. 839-846
- Treichel, H.¹ Braun, R.² Gabric, Z.³ Spindler, O.⁴ Gschwandtner, A.⁵

2
- 0020495955
- (1984) Vacuum , vol.34 , pp. 315-320
- Bartle, D.C.¹ Andrews, D.C.² Grange, J.D.³ Harris, P.G.⁴ Trigg, A.D.⁵ Wicknden, D.K.⁶

3
- 0003679027
- Auckland: McGraw-Hill International
- (1986) VLSI technology , pp. 119-121
- Sze, S.M.¹

4
- 0004206714
- Amsterdam: Elsevier Science
- (1988) Silicon nitride in electronics
- Belyi, V.I.¹

5
- 0030125195
- (1996) Thin Solid Films , vol.276 , pp. 257-260
- Krüger, M.¹ Arens-Fisher, R.² Thönissen, M.³ Münder, H.⁴ Berger, M.⁵ Lüth, H.⁶

6
- 0000239762
- (1991) J Vac Sci Technol A , vol.9 , pp. 480-484
- Barbour, J.C.¹ Stein, H.J.² Popov, O.A.³ Yonder, M.⁴ Outten, C.A.⁵

7
- 0026821485
- (1992) Jpn J Appl Phys , vol.31 , pp. 336-342
- Kobayashi, I.¹ Ogawa, T.² Hotta, S.³

8
- 0021633320
- (1984) Proc Soc Photo-Opt Instrum Eng , vol.460 , pp. 56-58
- Naik, I.K.¹

9
- 0022070999
- (1985) Solid State Tech , vol.28 , pp. 197-203
- Gorowitz, B.¹ Gorczyca, T.B.² Saia, R.J.³

10
- 0025385564
- (1990) J Electrochem Soc , vol.137 , pp. 614-623
- Smith, D.L.¹ Alimonda, A.S.² Chen, C.C.³ Ready, S.E.⁴ Wacker, B.⁵

11
- 0000513694
- (1991) J Appl Phys , vol.70 , pp. 1553-1560
- Parsons, G.N.¹ Souk, J.H.² Batey, J.³

12
- 0032205532
- (1998) Thin Solid Films , vol.333 , pp. 71-76
- Lin, H.¹ Xu, L.² Chen, X.³ Wang, X.⁴ Sheng, M.⁵ Stubhan, F.⁶ Merkel, K.H.⁷ Wilde, J.⁸

13
- 0031141249
- (1997) Plas Sources Sci Technol , vol.6 , pp. 147-156
- Granier, A.¹ Nicolazo, F.² Vallee, C.³ Goullet, A.⁴ Turban, G.⁵ Grolleau, B.⁶

14
- 0003638740
- New Jersey: Noyes Publication
- (1995) High density plasmas: Design, physics and performance
- Popov, O.A.¹

15
- 0031186403
- (1997) Semicond Sci Technol , vol.12 , pp. 927-932
- Hernadez, M.J.¹ Garrido, J.² Martinez, J.³ Piqueras, J.⁴

16
- 0001224373
- (1995) J Vac Sci Technol A , vol.13 , pp. 2900-2907
- Sitbon, S.¹ Hugon, M.C.² Agius, B.³ Courant, J.L.⁴

17
- 0031996428
- (1998) J Electrochem Soc , vol.145 , pp. 652-658
- Han, S.S.¹ Jun, B.H.² No, K.³ Bae, B.S.⁴

18
- 0032623421
- (1999) Thin Solid Films , vol.343 , Issue.4 , pp. 299-301
- Zambom, L.S.¹ Mansano, R.D.² Furlan, R.³ Verdonck, P.⁴

19
- 0000635783
- (1991) J Non-Crys Solids , vol.137 , Issue.8 , pp. 879-882
- Yin, Z.¹ Smith, F.W.²

20
- 0017959228
- (1978) J Appl Phys , vol.49 , pp. 2473-2477
- Lanford, W.A.¹ Rand, M.J.²

21
- 0021406276
- (1984) J Appl Phys , vol.55 , pp. 3068-3071
- Maeda, M.¹ Nakamura, H.²

22
- 0000688770
- (1995) J Appl Phys , vol.77 , pp. 1284-1293
- Kotecki, D.E.¹ Sokol, J.D.C.²

23
- 0024056374
- (1998) Thin Solid Films , vol.162 , pp. 129-143
- Noskov, A.G.¹ Gorokhov, E.B.² Sokolova, G.A.³ Trukhanov, E.M.⁴ Stenin, S.I.⁵

24
- 84956075336
- (1972) Jpn J Appl Phys , vol.11 , pp. 1097-1105
- Tamura, M.¹ Sunami, H.²

25
- 0026819342
- (1992) Jpn J Appl Phys , vol.31 , pp. 348-354
- Yamamoto, S.¹ Migitaka, M.²

26
- 0031271627
- (1997) J Vac Sci Technol A , vol.15 , pp. 3143-3153
- Hugon, M.C.¹ Delmotte, F.² Agius, B.³ Courant, J.L.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.