SiOxNy thin films deposited by reactive sputtering: Process study and structural characterisation

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3480-3487

  Rebib, F ^a   Tomasella, E ^a   Dubois, M ^a   Cellier, J ^a   Sauvage, T ^b   Jacquet, M ^a  

^a CNRS   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

Deposition process; Reactive sputtering; Silicon oxynitride; Structural properties

Indexed keywords

ELECTROMAGNETIC WAVE ABSORPTION; MOLECULAR STRUCTURE; SILICON COMPOUNDS; SPUTTER DEPOSITION; THIN FILMS;

DEPOSITION PROCESS; REACTIVE SPUTTERING; SILICON OXYNITRIDE; STRUCTURAL PROPERTIES;

SEMICONDUCTING FILMS;

EID: 33846990968     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.125     Document Type: Article

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