LPCVD deposition of silicon nitride assisted by high density plasmas

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 299-301

  Zambom, L S ^b   Mansano, R D ^a   Furlan, R ^a   Verdonck, P ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b Faculdades Integradas de S Paulo   (Brazil)

Author keywords

High density plasma; Low pressure chemical vapour deposition; Silicon nitride

Indexed keywords

AMMONIUM COMPOUNDS; CHEMICAL REACTORS; CHLORINE COMPOUNDS; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; STOICHIOMETRY;

DICHLOROSILANE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SEMICONDUCTING FILMS;

EID: 0032623421     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01587-9     Document Type: Article

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