Improvement of nitrogen retained dose using ammonia as a precursor in nitrogen plasma immersion ion implantation of silicon

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 5, 2005, Pages 1346-1349

  Wan, G J ^a,b   Yang, P ^b   Fu, Ricky K Y ^a   Yao, Zh Q ^b   Huang, N ^b   Chu, Paul K ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b SOUTHWEST JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROPHILICITY; ION IMPLANTATION; NITROGEN; PLASMAS; X RAY PHOTOELECTRON SPECTROSCOPY;

NITROGEN REACTIVITY; PLASMA IMMERSION; PRECURSORS; RESIDUAL VACUUM;

SILICON;

EID: 31344469114     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1991870     Document Type: Article

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