Influences of the nitrogen content on the morphological, chemical and optical properties of pulsed laser deposited silicon nitride thin films

Surface and Coatings Technology

Volumn 192, Issue 2-3, 2005, Pages 225-230

  Lackner, Juergen M ^a   Waldhauser, W ^a   Berghauser, R ^a   Ebner, R ^a   Beutl, M ^a   Jakopic, G ^a   Leising, G ^a   Hutter, H ^b   Rosner, M ^b   Schoberl T ^c  

^a JOANNEUM RESEARCH   (Austria)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c ERICH SCHMID INSTITUTE OF MATERIALS SCIENCE   (Austria)

Author keywords

Extinction coefficient; Laser ablation; PLD; Pulsed laser deposition; Refractive index; Si3 N4; Silicon nitride; SiNx; Spectroscopy ellipsometry

Indexed keywords

BONDING; DEPOSITION; ELLIPSOMETRY; MORPHOLOGY; PARTIAL PRESSURE; PULSED LASER DEPOSITION; SECONDARY ION MASS SPECTROMETRY; STOICHIOMETRY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ND:YAG; ROOM TEMPERATURE; SPECTROSCOPIC ELLIPSOMETRY; SURFACE QUALITIES;

SILICON NITRIDE;

COATING;

EID: 19944428743     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.04.080     Document Type: Article

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