A robust k ∼ 2.3 SiCOH low-k film formed by porogen removal with UV-cure

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2575-2581

  Kemeling, Nathan ^a   Matsushita, Kiyohiro ^a   Tsuji, Naoto ^a   Kagami, Ken ichi ^a   Kato, Manabu ^a   Kaneko, Shinya ^a   Sprey, Hessel ^b   de Roest, David ^b   Kobayashi, Nobuyoshi ^b  

^a ASM Japan KK   (Japan)

^b ASM BELGIUM   (Belgium)

Author keywords

BEOL integration; Diffusion barrier; Low k; Porogen; UV cure

Indexed keywords

ELASTIC MODULI; PERMITTIVITY; SHRINKAGE; THERMAL EFFECTS; ULTRAVIOLET LAMPS;

DIFFUSION BARRIER; NETWORK RESTRUCTURING; POROGEN REMOVAL; UV ABSORPTION LAYER;

METALLIC FILMS;

EID: 34548812561     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.025     Document Type: Article

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