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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 3, 2010, Pages 581-587

Electron-beam exposure mechanisms in hydrogen silsesquioxane investigated by vibrational spectroscopy and in situ electron-beam-induced desorption

(5) Olynick, D L a Cord, B b Schipotinin, A a Ogletree, D F a Schuck, P J a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b Vistec Lithography Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DESORPTION; ELECTRON BEAM LITHOGRAPHY; ELECTRONS; HYDROGEN; INFRARED SPECTROSCOPY; OXYGEN; RAMAN SPECTROSCOPY; VIBRATIONAL SPECTROSCOPY;

ADDITIONAL REACTIONS; CUBIC STRUCTURE; ELECTRON-BEAM EXPOSURE; EXPOSURE MECHANISM; HIGH RESOLUTION; HYDROGEN ATOMS; HYDROGEN SILSESQUIOXANE; IN-SITU; NANOSCIENCE APPLICATIONS; OXYGEN ATOM; RAMAN SPECTRA; REDISTRIBUTION REACTIONS; SILICON ATOMS;

CRYSTAL ATOMIC STRUCTURE;

EID: 77952997862 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3425632 Document Type: Conference Paper

Times cited : (52)

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