Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 138-143

  Junarsa, Ivan ^a,b   Stoykovich, Mark P ^a,b   Nealey, Paul F ^a,b   Ma, Yuansheng ^a,b   Cerrina, Franco ^a,b   Solak, Harun H ^c  

^a University of Wisconsin Madison   (United States)

^b Center for Nanotechnology   (United States)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY; LINE EDGE ROUGHNESS (LER);

IMAGING TECHNIQUES; LITHOGRAPHY; SENSITIVITY ANALYSIS; ULTRAVIOLET RADIATION;

HYDROGEN INORGANIC COMPOUNDS;

EID: 31144469890     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1849213     Document Type: Article

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