Bilayer resist method for room-temperature nanoimprint lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 B, 2004, Pages 4050-4053

  Nakamatsu, Ken Ichiro ^a   Watanabe, Keiichiro ^a   Tone, Katsuhiko ^a,b   Katase, Tetsuya ^b   Hattori, Wataru ^c   Ochiai, Yukinori ^c   Matsuo, Takahiro ^d   Sasago, Masaru ^d   Namatsu, Hideo ^e   Komuro, Masanori ^f   Matsui, Shinji ^a  

^a UNIVERSITY OF HYOGO   (Japan)

^b Meisyo Co   (Japan)

^c NEC CORPORATION   (Japan)

^d PANASONIC CORPORATION   (Japan)

^e Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^f NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Bilayer; High aspect resist patterns; HSQ; Lithography; Nanoimprint

Indexed keywords

BILAYER; HIGH ASPECT RESIST PATTERNS; HYDROGEN SILSEQUIOXANE (HSQ); NANOIMPRINT;

GLASS; PHOTORESISTS; PROBLEM SOLVING; REACTIVE ION ETCHING; SERVOMOTORS; THERMAL CYCLING;

NANOTECHNOLOGY;

EID: 4444265369     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.4050     Document Type: Conference Paper

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