Epitaxial growth and photoresponse properties of BaSi2 layers toward Si-based high-efficiency solar cells

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Matsumoto, Yuta ^a   Tsukada, Dai ^a   Sasaki, Ryo ^a   Takeishi, Michitoshi ^a   Saito, Takanobu ^a   Suemasu, Takashi ^a,b   Usami, Noritaka ^c   Sasase, Masato ^d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM-INDUCED CRYSTALLIZATION; ELECTRON BACKSCATTER DIFFRACTION ANALYSIS; GRAIN SIZE; HIGH-EFFICIENCY SOLAR CELLS; PHOTON ENERGY; PHOTORESPONSES; PHOTORESPONSIVITY; POLYCRYSTALLINE FILM; POLYCRYSTALLINE-SI; ROOM TEMPERATURE; SI (1 1 1); SI-BASED; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; EPITAXIAL GROWTH; LIGHT; METALLORGANIC VAPOR PHASE EPITAXY; PHOTONS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS;

EPITAXIAL FILMS;

EID: 77952728570     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DP05     Document Type: Article

References (28)

1. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981).
2. J. Evers, G. Oehlinger, and A. Weiss: Angew. Chem., Int. Ed. Engl. 16 (1977) 659.
3. T. Nakamura, T. Suemasu, K. Takakura, F. Hasegawa, A. Wakahara, and M. Imai: Appl. Phys. Lett. 81 (2002) 1032.
4. K. Morita, Y. Inomata, and T. Suemasu: Thin Solid Films 508 (2006) 363.
5. K. Morita, Y. Inomata, and T. Suemasu: Jpn. J. Appl. Phys. 45 (2006) L390.
6. T. Suemasu, K. Morita, and M. Kobayashi: J. Cryst. Growth 301-302 (2007) 680.
7. D. B. Migas, V. L. Shaposhnikov, and V. E. Borisenko: Phys. Status Solidi B 244 (2007) 2611.
8. M. Imai and T. Hirano: J. Alloys Compd. 224 (1995) 111.
9. M. Imai and T. Hirano: Phys. Rev. B 58 (1998) 11922.
10. R. A. McKee, F. J. Walker, J. R. Conner, and R. Raj: Appl. Phys. Lett. 63 (1993) 2818.
11. Y. Inomata, T. Nakamura, T. Suemasu, and F. Hasegawa: Jpn. J. Appl. Phys. 43 (2004) L478.
12. Y. Inomata, T. Nakamura, T. Suemasu, and F. Hasegawa: Jpn. J. Appl. Phys. 43 (2004) 4155.
13. Y. Inomata, T. Suemasu, T. Izawa, and F. Hasegawa: Jpn. J. Appl. Phys. 43 (2004) L771.
14. T. Suemasu, M. Sasase, Y. Ichikawa, M. Kobayashi, and D. Tsukada: J. Cryst. Growth 310 (2008) 1250.
15. M. Kobayashi, K. Morita, and T. Suemasu: Thin Solid Films 515 (2007) 8242.
16. M. Kobayashi, Y. Matsumoto, Y. Ichikawa, D. Tsukada, and T. Suemasu: Appl. Phys. Express 1 (2008) 051403.
17. Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, and T. Suemasu: Appl. Phys. Express 2 (2009) 021101.
18. D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami, and T. Suemasu: Appl. Phys. Express 2 (2009) 051601.
19. D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami, and T. Suemasu: J. Cryst. Growth 311 (2009) 3581.
20. T. Ootsuka, Y. Fudamoto, M. Osamura, T. Suemasu, Y. Makita, Y. Nakayama, and Y. Fukuzawa: Appl. Phys. Lett. 91 (2007) 142114.
21. T. Ootsuka, T. Suemasu, J. Chen, T. Sekiguchi, and Y. Hara: Appl. Phys. Lett. 92 (2008) 192114.
22. T. Ootsuka, T. Suemasu, J. Chen, and T. Sekiguchi: Appl. Phys. Lett. 92 (2008) 042117.
23. Z. X. Liu, M. Osamura, T. Ootsuka, S. Wang, Y. Fukuzawa, Y. Suzuki, R. Kuroda, T. Mise, N. Otogawa, Y. Nakayama, H. Tanoue, and Y. Makita: Opt. Mater. 27 (2005) 942.
24. M. Shaban, K. Nomoto, S. Izumi, and T. Yoshitake: Appl. Phys. Lett. 94 (2009) 222113.
25. O. Nast, T. Puzzer, L. M. Koschier, A. B. Sproul, and S. R. Wenham: Appl. Phys. Lett. 73 (1998) 3214.
26. S. Gall, M. Muske, I. Sieber, O. Nast, and W. Fuhs: J. Non-Cryst. Solids 299 (2002) 741.
27. A. Hiroe, T. Goto, A. Teramoto, and T. Ohmi: Jpn. J. Appl. Phys. 48 (2009) 04C124.
28. T. Suemasu, K. Morita, M. Kobayashi, M. Saida, and M. Sasaki: Jpn. J. Appl. Phys. 45 (2006) L519.