Photoresponse properties of semiconducting BaSi2 epitaxial films grown on Si(111) substrates by molecular beam epitaxy

Applied Physics Express

Volumn 2, Issue 2, 2009, Pages

  Matsumoto, Yuta ^a   Tsukada, Dai ^a   Sasaki, Ryo ^a   Takeishi, Mitsutomo ^a   Suemasu, Takashi ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; CRYSTAL GROWTH; ELECTRODES; EPITAXIAL FILMS; EPITAXIAL GROWTH; GOLD; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHOTONS; SEMICONDUCTING FILMS; SEMICONDUCTOR QUANTUM WIRES; SILICIDES;

AU ELECTRODES; EXTERNAL QUANTUM EFFICIENCIES; PHOTO RESPONSE; PHOTON ENERGIES; SI (1 1 1); SI(111) SUBSTRATES; SILICIDE FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 60349122066     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.021101     Document Type: Article

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