Epitaxial growth of Si-based ternary alloy semiconductor Ba 1-xSrxSi2 films on Si(111) substrates by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 6 B, 2004, Pages

  Inomata, Yuya ^a   Suemasu, Takashi ^a   Izawa, Takamasa ^a   Hasegawa, Fumio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Ba1 xSrxSi2; BaSi2; Molecular beam epitaxy (MBE); RBS; Template

Indexed keywords

BARIUM COMPOUNDS; COMPUTER SIMULATION; EPITAXIAL GROWTH; METALLIC FILMS; MOLECULAR BEAM EPITAXY; SILICON; SUBSTRATES;

BA1-XSRXSI2; BASI2; RBS; TEMPLATES;

TERNARY SYSTEMS;

EID: 4243131540     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l771     Document Type: Article

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